Frequencies up to about 1000GHz
2DSFxx diodes are developed for frequencies up to about 1000GHz. Pad geometry is strongly reduced to allow integration into mm-wave and THz circuits. The 2DSFxx structure represents a single low-barrier anode and two contact pads.
2DSFxx diodes are fabricated by so-called “Film-Diode” technology and implemented on 5µm-thin resin substrate with dielectric constant of 2.8. This technology process has been particularly developed at ACST for mm-wave and THz frequencies and allows for ultra-low parasitics of the diode structure, and hence, ultimate performance at mm-waves and THz frequencies.
The anode is fully passivated against harsh environment. Contact pads are gold finished.
3DSFxx diodes can be mounted onto submount substrate by flip-chip soldering or gluing using conductive epoxies.