Frequencies up to about 250GHz
4DSFxx diodes are developed for frequencies up to about 250GHz. Geometrically they are relatively large for easy handling and mounting procedures. The 4DSFxx structure represents a single low-barrier anode and two contact pads.
4DSFxx diodes are fabricated by so-called “Film-Diode” technology and implemented on 5µm-thin resin substrate with dielectric constant of 2.8. This technology process has been particularly developed at ACST for mm-wave and THz frequencies and allows for ultra-low parasitics of the diode structure, and hence, ultimate performance at mm-waves and THz frequencies.
The anode is fully passivated against harsh environment. Contact pads are gold finished.
One of alone-standing features of 4DSFxx diodes is their suitability for mounting in the surrounding circuitry not only by soldering/gluing by conductive epoxies but ALSO by thermosonic compression. The second option is unique for mm-wave and THz diodes and allows for easy and reliable attachment of diodes onto circuitry substrates.