Frequencies up to about 500GHz
3DSFxx diodes are developed for frequencies up to about 500GHz. Pad geometry is reduced to allow integration into mm-wave and sub-mm-wave circuits. The 3DSFxx structure represents a single low-barrier anode and two contact pads.
3DSFxx diodes are fabricated by so-called “Film-Diode” technology and implemented on 5µm-thin resin substrate with dielectric constant of 2.8. This technology process has been particularly developed at ACST for mm-wave and THz frequencies and allows for ultra-low parasitics of the diode structure, and hence, ultimate performance at mm-waves and THz frequencies.
The anode is fully passivated against harsh environment. Contact pads are gold finished.
3DSFxx diodes can be mounted onto submount substrate by flip-chip soldering or gluing using conductive epoxies.
Low-barrier varistor on 5 µm thick transferred membrane-substrate for zero-bias operation.
Diode parameters are usually determined for each batch individually and may vary within up to 20% from nominal values. For large ordering quantities customer specifications can be considered. Please ask on availability before ordering.
ACST reserve the right to change the information presented here without notice.