3MASx – Series

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Type 3MASx family of structures are fabricated by ACST planar process on thinned s.i. GaAs substrate.
The 3MASx structure represents two anti-parallel Schottky diodes, optimized for operation in varistor mode.

Application Areas:

  • Sub-Harmonically-Pumped Frequency Mixers
  • Wideband Frequency Multipliers

Product Features:

  • Strongly Reduced Shunt (pad-to-pad) Capacitance
  • Low Junction Capacitance
  • Low RF Series Resistance
  • Suitable for Flip-Chip Mounting Approach
  • Structure Geometry Optimised for Sub/MM-Waves Applications

Available Configurations

Structure Type Nominal Parameters Short Structure Description
Junction Capacitance Cj0 (fF/anode) Total Capacitance
Ctot (fF)
Series Resistance Rs/Differential Resistance Rdiff (Ω) Breakdown Voltage Ubd (V)
3MAS1.5 1.5 8.0 18  – Two varistors in anti-parallel configuration on 10 µm thick semi-insulated GaAs substrate for ultimate MM/Sub-MM wave performance.
3MAS2.3 2.3 9.6 16  –
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Diode parameters are usually determined for each batch individually and may vary within up to 20% from nominal values. For large ordering quantities customer specifications can be considered. Please ask on availability before ordering.

ACST reserve the right to change the information presented here without notice.

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