4DSFx – Series

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Type 4DSFx diodes are fabricated by ACST Film-Diode (FD) Process and are designed for applications at frequencies up to W-Band (75-110GHz). FD-Structures are implemented on a transferred membrane-Substrate, which is just few µm thin and of a low dielectric constant insulator. This allows for a drastic reduction of structure parasitic and, therefore, aims at ultimate performance at high frequencies. Optically-transparent membrane-substrate allows for accurate positioning for diode mounting/assembly.

The 4DSFx structure represents a single-anode Schottky diode, optimised for operation in Varistor mode under Zero-Bias Condition. Low differential resistance enables easy matching with 50 Ohm reading electronics, which is of a crucial importance for high-speed electronics (i.e. high bit-rate data transmission systems).

Beside traditional approaches for mounting MM-Wave diodes by soldering and gluing with conductive epoxies, the 4DSF20 diodes are also suitable for mounting by thermo-compression in a similar manner as beam-lead diodes. Main advantages of thermo-compression diode mounting approach is that it does not require any hazardous material like is flux or soldering paste, and is suitable for automatic process using automatic pick-up and precision positioning machines. This option offers major advantages in comparison to soldering and gluing approaches in terms of reliability and assembly costs.

Available Configurations

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Diode parameters are usually determined for each batch individually and may vary within up to 50% from nominal values.

For large ordering quantities customer specifications can be considered.

Please ask on availability before ordering.


Application Areas:

  • Zero-Bias square-low (envelope) detectors
  • Power sensors
  • Frequency mixers with low-LO-requirements
  • High-frequency low-power rectifiers for wireless power transmission

Product Features:

  • Low noise due to 0V-bias
  • Low 0V differential resistance (easy matching with 50 Ohm reading electronics)
  • Strongly reduced shunt (pad-to-pad) capacitance
  • Suitable for flip-chip mounting approach
  • Suitable for mounting approach by thermo-compression (only 4DSF20)
  • Structure geometry optimised for frequencies up to 110GHz

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Please Contact ACST for Price Information.