3DSFx – Series
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Type 3DSFx family of structures are fabricated by ACST Film-Diode (FD) Process. FD-Structures are implemented on a transferred membrane-Substrate, which is just few µm thin and of a low dielectric constant insulator. This allows for a drastic reduction of structure parasitic and, therefore, aims at ultimate performance at MM/SubMM-Waves. Optically-transparent membrane-substrate allows for accurate positioning for diode mounting/assembly.
The 3DSFx structure represents a single-anode Schottky diode, optimised for operation in varistor mode under Zero-Bias Condition. Low differential resistance enables easy matching with 50 Ohm reading electronics, which is of a crucial importance for high-speed electronics (data transmission systems).
- Zero-Bias Square-Low (Envelope) Detectors
- Fundamental Frequency Mixers with Low-LO-Requirements
- Sub-Harmonically-Pumped Frequency Mixers with Low-LO-Requirements
- High-Frequency Low-Power Rectifiers
- Low Noise due to 0V-Bias
- Low 0V Differential Resistance (easy matching with 50 Ohm reading electronics)
- Strongly Reduced Shunt (pad-to-pad) Capacitance
- Suitable for Flip-Chip Mounting Approach
- Structure geometry optimised for MM/SubMM-Waves applications
|Structure Type||Nominal Parameters||
Short Structure Description
|Junction Capacitance Cj0 (fF/anode)||Total Capacitance
|Series Resistance Rs/Differential Resistance Rdiff (Ω)||Breakdown Voltage Ubd (V)|
|3DSF5||5||8||/2500||2.0||Low-barrier varistor on 5 µm thick transferred membrane-substrate for zero-bias operation.|
Diode parameters are usually determined for each batch individually and may vary within up to 20% from nominal values. For large ordering quantities customer specifications can be considered. Please ask on availability before ordering.
ACST reserve the right to change the information presented here without notice.
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