Low-Barrier Diodes

Please contact us for further information concerning diode specifications and availability.

Structure schematic (not to scale)
and pad geometry (Ám)
Nominal chip dimensions
L x W x T (Ám)
2DSFx  80 x 30 x 10
3DSFx 150 x 50 x 10
 

Available diode configurations:

Structure
type
Nominal parameters Short structure
description
Junction
capacitance
Cj0 (fF/anode)
Total
capacitance
Ctot (fF)
Series
resistance Rs/
differential
resistance Rdiff (Ω)
Breakdown
voltage
Ubd (V)
2DSF2.5 2.5 5 / 4000 2.5 Low-barrier varistor on 5 Ám thick transferred membrane-substrate for zero-bias operation.
2DSF8.0 8.0 11.5 / 1500 2.0
3DSF5 5 8 / 1500 2.0
3DSF10 10 13 / 750 1.6
3DSF20 20 23 / 375 1.3
3DSF30 30 33 / 250 1.0

Diode parameters are usually determined for each batch individually and may vary within up to 20% from nominal values.
Please ask on availability before ordering.
For large ordering quantities customer specifications can be considered.

 
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