Varistor Diodes

Please contact us for further information concerning diode specifications and availability.

Structure schematic (not to scale)
and pad geometry (Ám)
Nominal chip dimensions
L x W x T (Ám)
3MAMx_3MASx  3MAM: 165 x 65 x 10
3MAS: 165 x 65 x 15
3MSMx_3MSSx 3MSM: 165 x 65 x 10
3MSS: 165 x 65 x 15
2MAFx 75 x 50 x 10
 

Available diode configurations:

Structure
type
Nominal parameters Short structure
description
Junction
capacitance
Cj0 (fF/anode)
Total
capacitance
Ctot (fF)
Series
resistance Rs/
differential
resistance Rdiff (Ω)
Breakdown
voltage
Ubd (V)
2MAF1.0 1.0 5.5 25 - Two varistors in anti-parallel configuration on 5 Ám thick transferred membrane-substrate for ultimate MM/Sub-MM wave performance.
2MAF1.5 1.5 6.5 18 -
2MAF2.3 2.3 8.5 13 -
2MAF3.2 3.2 11 11 -
2MAM1.5 1.5 8 18 - Two varistors in anti-parallel configuration on 4 Ám thick AlGaAs-substrate.
3MAM3.2 3.2 11.4 13 -
3MAM4.6 4.6 14.2 11 -
3MAS1.5 1.5 8 18 - Two varistors in anti-parallel configuration on 10 Ám thick GaAs-substrate.
3MAS3.2 3.2 12.4 13 -
3MAS4.6 4.6 15.2 11 -
3MAS8.1 8.1 21.2 9 -
3MSM1.5 1.5 5.5 18 4.0 Single varistor on 4 Ám thick AlGaAs-substrate.
3MSM3.2 3.2 7.2 13 4.0
3MSM4.6 4.6 8.6 10 4.0
3MSS3.2 3.2 8.2 13 4.0
3MSS4.6 4.6 9.6 10 4.0
3MSS8.1 8.1 13.1 9 4.0

Diode parameters are usually determined for each batch individually and may vary within up to 20% from nominal values.
Please ask on availability before ordering.
For large ordering quantities customer specifications can be considered.

 
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