Varactor Diodes

ACST Varactor Diodes exhibit nearly ideal I-V behavior, i.e. very little reverse current and abrupt breakdown at a voltage close to the theoretical limit for particular doping concentration. This allows for accurate module design and optimal power-handling capability. Several varactor diodes have recently been developed. Please contact us for further information concerning diode specifications and availability.

Structure schematic (not to scale)
and pad geometry (Ám)
Nominal chip dimensions
L x W x T (Ám)
5VAx 240 x 60 x 35
 

Available diode configurations:

Structure
type
Nominal parameters Short structure
description
Junction
capacitance
Cj0 (fF/anode)
Total
capacitance
Ctot (fF)
Series
resistance Rs/
differential
resistance Rdiff (Ω)
Breakdown
voltage
Ubd (V)
5VA40-10 40 14 13 30 Three varactors in series on 30 Ám thick GaAs-substrate.
5VA50-10 50 19 11 30
5VA60-10 60 22 10 30
5VA80-10 80 29 8.5 30
5VA25-13 25 11 19 40
5VA30-13 30 12 17 40
5VA35-13 35 14 15 40
5VA40-13 40 16 13 40
5VA50-13 50 19 11 40
5VA60-13 60 22 9.5 40
5VA70-13 70 25 8 40
5VA60-18 60 22 10.5 55

Diode parameters are usually determined for each batch individually and may vary within up to 20% from nominal values.
Please ask on availability before ordering.
For large ordering quantities customer specifications can be considered.

 
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